BIT’s 7th Annual World Congress of Nano Science &Technology (Nano S&T-2017)
★ Final Scientific Program
BIT’s 7th Annual World Congress of Nano Science & Technology – 2017

Nano-S&T-2017

Theme: Welcome to a New Era of Nano-Level
Time: October 24- 26, 2017
Venue: Hilton Fukuoka Sea Hawk, Japan

 

Keynote Forum Scientific Program
Forum 1: Frontier of Nanoscience and Nanotechnology
Forum 2: Nano-Fabrication, Characterization and Nanometrology
Forum 3: Advanced and Smart Nanomaterials
Forum 4: Nano-Electronics and Microsystems
Forum 5: Nanomedicine and Nanobiotechnology
Forum 6: Nanotechnology in Sustainable Energy & Environment Protection
Forum 7: Young Scientist Forum
Forum 8: Applications of Nanotechnology
Poster Presentation

 

Forum 4: Nano-Electronics and Microsystems
Session 401: Nanoelectronics, Micro-Nanoelectronics and Molecular Electronics

Time: 13:30-17:30, October 24, 2017 (Tuesday)
Place: Kiku Room, 3rd Floor

Chair

Dr. Yu-Tai Tao, Distinguished Research Fellow, Institute of Chemistry, Academia Sinica, Taiwan

Co-Chair

Dr. Gilles Jacquemod, Professor, Polytech'Lab Director, Nice Sophia Antipolis University, France

13:30-13:35

Chair's Introduction

13:35-13:55

Keynote Speech:
Title:
Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics
Dr. Siegfried Selberherr, Professor, Institute for Microelectronics, TU Wien, Austria

13:55-14:15

Title: 'Transient Electronics': Biocompatible/Biodegradable Electronic Devices Dissolve in Body, Environment
Dr. Suk-Won Hwang, Assistant Professor, Korea University, South Korea

14:15-14:35

Title: Organic Transistor Memory with Charge Storate Double Floating Gate Monolayer

Dr. Yu-Tai Tao, Distinguished Research Fellow, Institute of Chemistry, Academia Sinica, Taiwan

14:35-14:55

Title: Important Roles of Hole Injection and Inclusion of Sub-Oxide and Metallic Si Atoms on Resistive Transition of Sputter-Deposited Silicon Oxide Films
Dr. Yasuhisa Omura, Professor, Kansai University, Japan
Invited Speech

14:55-15:15

Title: Intrinsic Conduction Mechanism in Polymer Nanofibers
Dr. Yung Woo Park, Professor, Seoul National University, South Korea
Invited Speech

15:15-15:30

Coffee Break

15:30-15:50 Title: Back-Gate Cross-Coupled Cells for High Performance Clock in 28nm FDSOI Technology
Dr. Gilles Jacquemod, Professor, Polytech'Lab Director, Nice Sophia Antipolis University, France
15:50-16:10

Title: Metal-Insulator Transition Properties of Electric Nanodomains in the Strongly Electron Correlated Metal Oxide Nanowall Wire
Dr. Azusa N. Hattori, Assistant Professor, Osaka University, Japan
Invited Speech

16:10-16:30 Title: Charge Transport Through Single Molecule Junctions on Fully Non-Metalic Electrodes
Dr. Li Yang, Associate Professor, Xi'an Jiaotong Liverpool University, China
Invited Speech
16:30-16:50 Title: The Charge Transport Mechanism and the Trap Nature in ReRAM FeRAM and Charge Trap Flash Memory Devices
Dr. V.A. Gritsenko, Leading Researcher, Rzhanov Institute of Semiconductor Physics, SB RAS, Russia
16:50-17:10

Title: Single Molecule Conductance Study of Organometallic Molecular Wires

Dr. Yuya Tanaka, Assistant Professor, Tokyo Institute of Technology, Japan
17:10-17:30

Title: Low Temperature Study of Multilevel Resistive Switching Effects in Memristors with Pt/TiO2/Al2O3/Pt and Pt/Al2O3/TiO2/Pt Bilayer Structures

Dr. Natalia Andreeva, Senior Researcher, Saint Petersburg Electrotechnical University "LETI", Russia

 

Session 402: Metals, Semiconductors, And Junction Devices

Time: 13:30-17:50, October 24, 2017 (Tuesday)
Place: Rigel Room, 3rd Floor

Chair

Dr. Mike Leszczynski, Professor, Institute of High Pressure Physics, Unipress and TopGaN Lasers, Poland

Co-Chair

Dr. Jacek Ulanski, Professor, Department of Molecular Physics, Lodz University of Technology, Poland

13:30-13:35

Chair's Introduction

13:35-13:55

Title: Low-Temperature Localized VLS Epitaxy for the Peripheral Protection of Wide Bandgap Power Devices
Dr. Christian Brylinski, Professor, Lyon University, France

13:55-14:15

Title: Reversible Defect Manipulation-Induced Novel Functionality in SnO2-Based Nano/Microwires
Dr. Makoto Sakurai, Senior Researcher, National Institute for Materials Science (NIMS), Japan

14:15-14:35

Title: Influence of Semiconductor Property on Metal Loss in Inverter Excitation
Dr. Keisuke Fujisaki, Professor, Toyota Technological Institute, Japan
Invited Speech

14:35-14:55

Title: pn-Control of Organic Semiconductors and Application to Organic Solar Cells
Dr. Masahiro Hiramoto, Professor, Institute of Molecular Science, Japan

14:55-15:15

Title: Power GaN: Innovation Scenario Toward the Society Without Energy Loss

Dr. Eiichi Yamaguchi, Professor, Kyoto University, Japan

15:15-15:30

Coffee Break

15:30-15:50

Title: Photophysical and Electroluminescent Properties of New lonic Iridium Complexes of [Ir(bzq)2(N^N)]+A Type
Dr. Jacek Ulanski, Professor, Department of Molecular Physics, Lodz University of Technology, Poland

Invited Speech

15:50-16:10

Title: Nitric Acid Oxide for Gate Oxide in Thin-Film Transistors and Passivation for Si Solar Cells, And Application of Si Swarf
Dr. Taketoshi Matsumoto, Associate Professor, The Institute of Scientific and Industrial Research, Osaka University, Japan
Invited Speech

16:10-16:30

Title: Si-Incorporated Amorphous Indium Oxide-Based Thin-Film Transistors for Stable Operation

Dr. Shinya Aikawa, Associate Professor, Kogakuin University, Japan

Invited Speech

16:30-16:50

Title: Nonreciprocal Electric Transport in Noncentrosymmetric Nanomaterials
Dr. Toshiya Ideue, Assistant Professor, The University of Tokyo, Japan
Invited Speech

16:50-17:10

Title: Towards High Performance Broadband Photodetectors Using Two-Dimensional Materials
Dr. Shaojuan Li, Lecturer, Soochow University, China

17:10-17:30

Title: Design of THz QCLs Toward High Output Power by Variable Height Active Structure Near Liquid Nitrogen Temperature Operation

Dr. Tsung-Tse Lin, Research Scientist, Center for Advanced Photonics, RIKEN, Japan

17:30-17:50

Title: Atomic-Scale Surface and Interface Characterization of Semiconductor Nanowires During Device Operation

Dr. Rainer Timm, Associate Professor, Lund University, Sweden

Invited Speech

 

Session 403: Nano-Silicon and Silicon-Microelectronics

Time: 08:30-11:45, October 25, 2017 (Wednesday)
Place: Sumire Room, 3rd Floor

Chair

Dr. Jenn-Gwo Hwu, Professor, Department of Electrical Engineering/Graduate Institute of Electronics Engineering, National Taiwan University, Taiwan

Co-Chair

Dr. Alain Bravaix, Professor, ISEN, REER-IM2NP, France

08:30-08:35

Chair's Introduction

08:35-09:00

Keynote Speech:
Title: Changing Degradation Mechanisms in Silicon Integrated Circuits
Dr. Cher Ming Tan,
Professor, Chang Gung University, Taiwan

09:00-09:25

Title: Silicon Continues to Surprise: Atomistic Simulations Shining a New Light on Nanomechanical Behavior
Dr. Roman Nowak, Professor, Nordic Hysitron Laboratory, Department of Chemistry and Materials Science, Aalto University, Finland; Extreme Energy-Density Research Institute, Nagaoka University of Technology, Japan
Invited Speech

09:25-09:50

Title: Enhanced Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal
Dr. Jenn-Gwo Hwu, Professor, Department of Electrical Engineering/Graduate Institute of Electronics Engineering, National Taiwan University, Taiwan

09:50-10:15

Title: Nanofabrication of New GaN-Based Devices
Dr. Mike Leszczynski, Professor, Institute of High Pressure Physics, Unipress and TopGaN Lasers, Poland
Invited Speech

10:15-10:30

Coffee Break

10:30-10:55

Title: FDSOI CMOS Technologies: New Resilient Digital Circuits Based on Adaptive Voltage Scaling for IoT Devices Hardened against Variability and Aging
Dr. Alain Bravaix, Professor, ISEN, REER-IM2NP, France

10:55-11:20

Title: First Principles Studies on MOVPE Growth of Nitride Semiconductor
Dr. Kenji Shiraishi, Professor, Nagoya University, Japan

11:20-11:45

Title: Epitaxial Silicene on Zrb2(0001): A Two-Dimensional Allotrope of Silicon

Dr. Antoine Fleurence, Assistant Professor, Japan Advanced Institute of Science and Technology, Japan

 

Session 404: Nanosystems and Nano-Devices

Time: 13:30-17:10, October 25, 2017 (Wednesday)
Place: Yoh Room, 3rd Floor

Chair

Dr. Francis Balestra, Director of Research CNRS, Grenoble INP-Minatec, France

Co-Chair

Dr. Gennady N. Panin, Professor, Nano-Information Technology Academy, Dongguk University, Republic of Korea; Institute for Microelectronics Technology, Russia

13:30-13:35

Chair's Introduction

13:35-13:55

Keynote Speech:

Title: Ohm to Arora: A New Paradigm for Nanoscale Devices and Circuits

Dr. Vijay K. Arora, Professor, Wilkes University, USA

13:55-14:15

Title: Field Effect Transistors: From Micro to Nano Devices
Dr. Joao A. Martino, Professor, University of Sao Paulo, Brazil
Invited Speech

14:15-14:35

Title: Ultimate CMOS and Beyond-CMOS for the End of the Nanoelectronic Roadmap

Dr. Francis Balestra, Director of Research CNRS, Grenoble INP-Minatec, France

14:35-14:55

Title: Design of Single-Electron (SE) Artificial Neural Network (ANN) Nano-Devices for Digital Circuits
Dr. Sameh E. Rehan, Professor, Al Imam Mohammad Ibn Saud Islamic University, Saudi Arabia

14:55-15:15

Title: Simulation of Junctionless Gate-All-Around Nanowire Transistors Using the Wigner Transport Equation: Results & Numerical Issues
Dr. Kyoung-Youm Kim, Professor, Sejong University, South Korea

15:15-15:30

Coffee Break

15:30-15:50

Title: Memristive Systems Based on Two-Dimensional Crystals

Dr. Gennady N. Panin, Professor, Nano-Information Technology Academy, Dongguk University, Republic of Korea; Institute for Microelectronics Technology, Russia

Invited Speech

15:50-16:10

Title: Interface Trap Characteristics of T-FinFET Devices
Dr. Jin He, Professor, Peking University Shenzhen SoC Key Laboratory, PKU-HKUST Shenzhen-Hongkong Institution, PKU Institute of Shenzhen, China
Invited Speech

16:10-16:30

Title: Theoretical Models for Electron Diffusion Coefficient of One-Dimensional Si Wire Devices: Impacts of Conduction Band Non-Parabolicity
Dr. Yasuhisa Omura, Professor, Kansai University, Japan

Invited Speech

16:30-16:50

Title: Challenges of Nanosystem Architectures: Realistic Paths to Multi-Scale, Multi-Modality Integration
Dr. Emmanuelle Pauliac-Vaujour, Head of the Sensor Autonomy and Integration Lab, CEA, LETI, MINATEC Campus, France

16:50-17:10 Title: Heterogeneous Monolithic Integration of Single Crystalline Organic Nanowires

Dr. Myung Mo Sung, Professor, Hanyang University, South Korea
Invited Speech

 

 Session 405: Quantum Dot, Quantum Wire, Quantum Well 

Time: 08:30-11:10, October 26, 2017 (Thursday)
Place: Sakura Room, 3rd Floor
Chair

Dr. Jea-Gun Park, Professor, Hanyang University, South Korea

Co-Chair
Dr. Masao Hirokawa, Professor, Hiroshima University, Japan
08:30-08:35
Chair's Introduction
08:35-08:55
Title: Quantum Dots in Analytical Chemistry, Molecular Diagnostics and Imaging of Biological Objects
Dr. Pavel Gladyshev, Professor, Dubna University, Russia
08:55-09:15
Title: Variability and Self-Average of Impurity-Limited Resistance in Semiconductor Nanowires
Dr. Nobuyuki Sano, Professor, University of Tsukuba, Japan
Invited Speech
09:15-09:35

Title: Quantum-Dot UV Camera Using Energy-Down-Shift Mechanism
Dr. Jea-Gun Park, Professor, Hanyang University, South Korea

09:35-09:55
Title: A Theoretical Study Onquantum-Dot Cellular Automata Made of Tetranuclear Mixed-Valence Metal Complexes: Relationship Between Molecular Structure and Device Operation
Dr. Ken Tokunaga, Associate Professor, Division of Liberal Arts, Center for Promotion of Higher Education, Kogakuin University, Japan
Invited Speech
09:55-10:15

Title: Transport Properties of Gate-Controlled Quantum Dot on 2D Material: Graphene, WSe2 etc
Dr. Linjun Wang, Associate Professor, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, China

10:15-10:30
Coffee Break
10:30-10:50
Title: Possibility of Spintronic-Qubit Control Through Tunnel-Junction on Quantum Wire
Dr. Masao Hirokawa, Professor, Hiroshima University, Japan
10:50-11:10
Title: Time Dependent and Stationary Transport in Highly Correlated Nanosystems.: Spin Filter and Quantum Gate Properties
Dr. Enrique V Anda, Distinguished Professor, Pontific Catholic University-Rio, Brazil

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